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Samsung 1GB (1x 1GB) CL2 DDR-266 PC2100 2.5V DR x4 ECC Registered 184-pin RDIMM RAM Module Classification_ram-ddr3-1066-sodimm-8gb-1x-dr-fm Dramatically improve performance and handle

SKU 8675265986
4.5
USD25.99 USD45.99

Pay in 4 interest-free payments of $6.50 Learn more

Shipping Estimate
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Ships within 48 hours · Estimated delivery Aug 21 - Aug 26

Description

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (2x 8GB) DDR3L 1600 MT/s 240-pin RDIMM RAM kit from Samsung

x8 configuration RAM kit from Hynix is for use in DDR4 compatible systems and operates at 2133 MT/s with an overall transfer rate of PC4-17000

M312L5720BG0-CB3 Capacity 2GB (1x 2GB) Brand Samsung Speed DDR-333 - 333MT/s - PC2700 Voltage 2

M386A8K40BM1-CPB Capacity 64GB (1x 64GB) Brand Samsung Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1

Samsung 1GB (1x 1GB) CL2 DDR-266 PC2100 2.5V DR x4 ECC Registered 184-pin RDIMM RAM Module Classification_ram-ddr3-1066-sodimm-8gb-1x-dr-fm Dramatically improve performance and handleProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 1GB (1x 1GB) DDR 266 MT s 184 pin RDIMM RAM module from Samsung . This Dual rank, x4 configuration RAM module is for use in DDR compatible systems and operates at 266 MT s with an overall transfer rate of PC2100. This RAM module also operates at a standard voltage of 2. 5V with a CAS Latency of

Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
  • To process your return/exchange, please contact us at [email protected]
  • Please click here for more details>>> Return & Exchange Policy

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