Hynix 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr4-2133-udimm-16gb-2x-dr RAM1831 Capacity 8GB (1x 8GB)

RAM1831 Capacity 8GB (1x 8GB) Brand Hynix Ramcity Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1

M471B5673FH0-CH9 Capacity 2GB (1x 2GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

8V Technology DDR2 Error Correction ECC Signal Processing Fully Buffered Form Factor 240-pin FB-DIMM Ranks Dual rank Configuration x8 Pieces in Kit 2 Compatibility

M393B1G73EB0-CMA Capacity 8GB (1x 8GB) Brand Samsung Speed DDR3-1866 - 1866MT/s - PC3-14900 Voltage 1

Hynix 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr4-2133-udimm-16gb-2x-dr RAM1831 Capacity 8GB (1x 8GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR3L 1600 MT s 240 pin EUDIMM RAM module from Hynix . This RAM module is for use in DDR3L compatible systems and operates at 1600 MT s with an overall transfer rate of PC3L 12800. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL11, and is