Hynix 2GB (1x 2GB) CL9 DDR3-1333 PC3-10600 1.5V 204-pin SODIMM RAM Module Signal Processing_Unbuffered 2V Technology DDR4 Error Correction

2V Technology DDR4 Error Correction ECC Signal Processing Load Reduced Form Factor 288-pin LRDIMM Ranks Quad rank CAS Latency CL17 Configuration x4 Pieces in Kit 1 Compatibility

8V Technology DDR2 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM CAS Latency CL4 Configuration 8-chip 64M x8 Pieces in Kit 2 Compatibility

M395T5160QZ4-CE66 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR2-667 - 667MT/s - PC2-5300 Voltage 1

M471B5673FH0-CF8 Capacity 2GB (1x 2GB) Brand Samsung Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1

Hynix 2GB (1x 2GB) CL9 DDR3-1333 PC3-10600 1.5V 204-pin SODIMM RAM Module Signal Processing_Unbuffered 2V Technology DDR4 Error CorrectionProduct Overview This 2GB (1x 2GB) DDR3 1333 MT s RAM module from Hynix is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL9, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.