Micron 4GB (1x 4GB) CL9 DDR3-1333 PC3-10600 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr3l-1600-lrdimm-32gb-1x-qr M378B5273EB0-CK0 Capacity 4GB (1x 4GB)

M378B5273EB0-CK0 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1

5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Configuration 2048M x8 Pieces in Kit 1 Compatibility

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (1x 16GB) DDR3 1866 MT/s 240-pin RDIMM RAM module from Hynix

This 1GB (1x 1GB) DDR 333 MT/s Dual rank

Micron 4GB (1x 4GB) CL9 DDR3-1333 PC3-10600 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr3l-1600-lrdimm-32gb-1x-qr M378B5273EB0-CK0 Capacity 4GB (1x 4GB)Product Overview This 4GB (1x 4GB) DDR3 1333 MT s RAM module from Micron is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL9, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.